| PART |
Description |
Maker |
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| MBM29PL160BD-90PF MBM29PL160BD-90PFTN MBM29PL160BD |
16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO44
16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
Modular Connector
122 x 32 pixel format, LED Backlight available
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| TE28F256J3F105A RC28F256J3F95 |
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MBM29DL164TD-70PFTN MBM29DL162TD-90PBT MBM29DL164T |
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU LTD
http://
|
| S25FL016A0LMAI011 S25FL016A0LNFI003 S25FL016A0LNFI |
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus 16M X 1 FLASH 3V PROM, PDSO8
|
Spansion, Inc.
SPANSION LLC
|
| M58LT256JST8ZA6F |
16M X 16 FLASH 1.8V PROM, 85 ns, PBGA64
|
STMICROELECTRONICS
|
| AM29LV256ML94REF |
16M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
SPANSION LLC
|
| MX29GA128EHXCI-90G |
16M X 8 FLASH 3V PROM, 90 ns, PBGA64
|
MACRONIX INTERNATIONAL CO LTD
|
|
